The Impact of Lithium Ion on the Application of Resistive Switching Devices
Abstract
With the development of the times, people have higher and higher requirements for
storage equipment. Many new storage devices have emerged, such as Magnetoresistive
random-access memory(MRAM) and Resistive random-access memory(ReRAM). The
junction structure is the basic unit of these two storage devices, and in this paper, the
MTJ and resistive switching junction are tuned with lithium fluoride(LiF) to optimize
their performance, respectively.
In the first experiment, a magnetic tunnelling junction resembling a battery is
developed and proved to be electromagnetically tuneable. In this LiF-based device, reversible
non-volatile resistive switching phenomena and tunnelling phenomena coexist,
enabling four well-defined groups for each device. The management of the interface enables
the spin transfer of actively controlled devices, hence enhancing their application
potential.
In the second experiment, 796 devices were measured. For the resistive switching
device with TiO as the insulating layer, adding additional LiF layer can significantly
increase the probability of resistive switching phenomenon, and adding an appropriate
thickness of LiF can also increase the differentiation between high and low group states,
which is beneficial for the regulation of resistive switching devices.
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Cite this version of the work
Guofei Long
(2023).
The Impact of Lithium Ion on the Application of Resistive Switching Devices. UWSpace.
http://hdl.handle.net/10012/19260
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